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屠晓光, 陈少武, 余金中. 硅基GHz高速电光调制器研究进展[J]. 物理, 2006, 35(04): 317-321.
引用本文: 屠晓光, 陈少武, 余金中. 硅基GHz高速电光调制器研究进展[J]. 物理, 2006, 35(04): 317-321.
Silicon-based GHz high speed electro-optic modulators[J]. PHYSICS, 2006, 35(04): 317-321.
Citation: Silicon-based GHz high speed electro-optic modulators[J]. PHYSICS, 2006, 35(04): 317-321.

硅基GHz高速电光调制器研究进展

Silicon-based GHz high speed electro-optic modulators

  • 摘要: 硅基高速电光调制器是新一代密集波分复用系统和光时分复用系统中的关键光电子器件,他的运用可以降低光通讯系统的制作成本并且大大有利于未来的硅基光电集成.目前国际上已经实现的硅基高速电光调制器件的调制速率已经超过6GHz.文章对国外硅基高速电光调制器的最新研究进展进行了介绍,评述了各种基于不同电学和光学结构的硅基电光调制器,对不同类型器件在制作和应用中的优缺点进行了比较.

     

    Abstract: Silicon-based high speed electro-optic modulators are essential components of high-capacity wavelength-division-multiplexed transmission systems of the present and next generations. They greatly increase the bandwidth and speed of fiber transmission systems at a low cost. Currently, electro-optic modulators with switching speeds exceeding 6GHz have been fabricated using methods compatible with CMOS manufacturing processes. We describe various kinds of silicon-based electro-optic modulators based on different electrical and optical structures, and discuss the advantages and disadvantages in their fabrication and application. The latest progress in the development of such modulators is summarized.

     

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