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黄红波, 徐寒, 黄彦君, 夏元复, 蒋中英. 多孔硅薄层的正电子湮灭寿命研究[J]. 物理, 2005, 34(02): 147-150.
引用本文: 黄红波, 徐寒, 黄彦君, 夏元复, 蒋中英. 多孔硅薄层的正电子湮灭寿命研究[J]. 物理, 2005, 34(02): 147-150.
Analysis of the porosity of porous silicon thin layers by positron annihilation lifetime spectroscopy[J]. PHYSICS, 2005, 34(02): 147-150.
Citation: Analysis of the porosity of porous silicon thin layers by positron annihilation lifetime spectroscopy[J]. PHYSICS, 2005, 34(02): 147-150.

多孔硅薄层的正电子湮灭寿命研究

Analysis of the porosity of porous silicon thin layers by positron annihilation lifetime spectroscopy

  • 摘要: 用阳极氧化法按不同腐蚀条件制备的多孔硅,其薄层厚度仅为几十纳米,远小于22Na源的正电子平均射程.文章提出了一种用22Na的正电子测量体寿命谱并扣除基片贡献的方法,来确定多孔硅薄层的平均孔径.

     

    Abstract: A porous silicon thin layer was prepared by anodic oxidation under different corrosion conditionEmails. The layer thickness was a few tens of nanometers, which is much smaller than the average range of positrons from a 22Na source. The mean pore volume and specific surface area in the samples were measured with 22Na positron life spectroscopy, by measuring the bulk lifetime spectrum of porous silicon and then deducting the lifetime spectrum of the substrate.

     

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