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刘承斌, 范曲立, 黄维, 王迅. 有机场效应晶体管材料及器件研究进展[J]. 物理, 2005, 34(06): 424-432.
引用本文: 刘承斌, 范曲立, 黄维, 王迅. 有机场效应晶体管材料及器件研究进展[J]. 物理, 2005, 34(06): 424-432.
Recent advance in organic field-effect transistors:materials, devices, and processes[J]. PHYSICS, 2005, 34(06): 424-432.
Citation: Recent advance in organic field-effect transistors:materials, devices, and processes[J]. PHYSICS, 2005, 34(06): 424-432.

有机场效应晶体管材料及器件研究进展

Recent advance in organic field-effect transistors:materials, devices, and processes

  • 摘要: 有机场效应晶体管(organic field-effect transistor, OFET)作为新一代半导体晶体管因其广阔的应用前景和近年来技术上的突飞猛进,使之成为微电子和信息领域科学研究和产品开发中热门的话题之一.文章概述了有机场效应晶体管的材料研究、器件制备技术以及有机场效应晶体管在各领域中应用的最新进展.

     

    Abstract: Organic field-effect transistor (OFET) as a new generation of transistors has been importantly considered due to his potential applications and breakthrough of technologies in the field of microelectronics and information. The shifted focus in research is from novel chemical structures to fabrication technologies. Progress in the growing field of OFETs is being discussed in detail.

     

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