高级检索
WANG Zhong-Ping, 巨新. 原子光刻[J]. 物理, 2009, 38(01): 1-10.
引用本文: WANG Zhong-Ping, 巨新. 原子光刻[J]. 物理, 2009, 38(01): 1-10.
Atom lithography[J]. PHYSICS, 2009, 38(01): 1-10.
Citation: Atom lithography[J]. PHYSICS, 2009, 38(01): 1-10.

原子光刻

Atom lithography

  • 摘要: 与光子和电子不同,原子的激发亚稳态具有方便操作的内能态结构,这使利用内能态的光学淬灭原理实现光刻技术成为现实.基于原子光学的中性原子束光刻技术是下一代光刻技术(the next generation lithography, NGL)的一种, 它可分两种途径实现:激光驻波原子直沉积技术和亚稳态中性原子光刻技术.前者可以实现图案的纳米尺度特征、大面积平行沉积和高分辨率;后者结合有效的抗蚀剂,同样可以实现纳米图形制造,在基板上获得的尖锐边缘分辨率目前可达40 nm.两种途径的原理相差甚远,但最终获得的结果相似.

     

    Abstract: Unlike photons and electrons, atoms in energetic metastable states have an internal state that is easily manipulated. This introduces the possibility of novel lithographic schemes based on optical quenching of the internal energy. As one of the next generation lithography schemes, neutral atom beam lithography based on atom optics may be realized through two approaches: (1) Direct atom deposition techniques by focusing laser standing waves, which can produce nanoscale features, large area parallel deposition and high resolution; (2) Metastable atom beam lithography combined with effective resists, which can also achieve minimum size features with a sharp edge resolution of 40 nm. It should be pointed out that the two methods are completely different in nature but produce very similar results.

     

/

返回文章
返回